Charge and spin transport in a metal-semiconductor heterostructure with double Schottky barriers

摘要

Taking into account the available experimental results, we model theelectronic properties and current-voltage characteristics of aferromagnet-semiconductor junction. The Fe/GaAs interface is considered as aFe/(i-GaAs)/n+-GaAs/n-GaAs multilayer structure with the Schottky barrier. Wealso calculate numerically the current-voltage characteristics of adouble-Schottky-barrier structure Fe/GaAs/Fe, which are in agreement withavailable experimental data. For this structure, we have estimated the spincurrent in the GaAs layer, which characterizes spin injection from theferromagnet to the semiconductor.